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ZXMP3A13F
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
I =-250 A, V DS = V GS
Drain-Source   Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
-30
-1.0
-0.5
100
V
A
nA
V
I D =-250 A, V GS =0V
V DS =-30V, V GS =0V
V GS = 20V, V DS =0V
D
Static Drain-Source On-State Resistance (1) R DS(on)
0.210
0.330
V GS =-10V, I D =-1.4A
V GS =-4.5V, I D =-1.1A
Forward Transconductance (1)(3)
g fs
2.4
S
V DS =-15V,I D =-1.4A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
206
59.3
49.2
pF
pF
pF
V DS =-15V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.5
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
3.0
11.1
7.6
3.8
6.4
0.69
2.0
ns
ns
ns
nC
nC
nC
nC
V DD =-15V, I D =-1A
R G =6.0 , V GS =-10V
V DS =-15V,V GS =-5V,
I D =-1.4A
V DS =-15V,V GS =-10V,
I D =-1.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
-0.85
15.6
9.6
-0.95
V
ns
nC
T J =25°C, I S =-1.1A,
V GS =0V
T J =25°C, I F =-0.95A,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width = 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2007
4
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